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XP06543|XP6543 PDF预览

XP06543|XP6543

更新时间: 2024-12-01 23:33:55
品牌 Logo 应用领域
松下 - PANASONIC 晶体晶体管
页数 文件大小 规格书
3页 78K
描述
Composite Device - Composite Transistors

XP06543|XP6543 数据手册

 浏览型号XP06543|XP6543的Datasheet PDF文件第2页浏览型号XP06543|XP6543的Datasheet PDF文件第3页 
Composite Transistors  
XP06543  
Silicon NPN epitaxial planar type  
Unit: mm  
+0.05  
0.12  
–0.02  
0.2 0.05  
For low noise amplification  
5
6
4
3
Features  
High transition frequency fT  
Two elements incorporated into one package (Each transistor is  
1
2
separated)  
(0.65) (0.65)  
1.3 0.1  
2.0 0.1  
Basic Part Number  
10˚  
2SC3904 × 2  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
Unit  
V
1: Emitter (Tr1)  
2: Emitter (Tr2)  
3: Base (Tr2)  
4: Collector (Tr2)  
5: Base (Tr1)  
6: Collector (Tr1)  
SMini6-G1 Package  
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
Emitter-base voltage (Collector open) VEBO  
15  
10  
V
2
65  
V
Marking Symbol: 9Y  
Internal Connection  
Collector current  
IC  
PT  
Tj  
mA  
mW  
°C  
°C  
Total power dissipation  
Junction temperature  
Storage temperature  
150  
150  
6
5
4
Tstg  
55 to +150  
Tr1  
Tr2  
1
2
3
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
ICBO  
IEBO  
hFE  
Conditions  
Min  
Typ  
Max  
1
Unit  
µA  
µA  
Collector-base cutoff current (Emitter open)  
Emitter-base cutoff current (Collector open)  
Forward current transfer ratio *  
Transition frequency *  
VCB = 10 V, IE = 0  
VEB = 1 V, IC = 0  
1
VCE = 8 V, IC = 20 mA  
50  
120  
8.5  
2.2  
0.6  
300  
fT  
VCE = 8 V, IC = 20 mA, f = 1.5 GHz  
VCE = 8 V, IC = 7 mA, f = 1.5 GHz  
VCB = 10 V, IE = 0, f = 1 MHz  
7.0  
GHz  
dB  
Noise figure  
NF  
3.0  
1.0  
Collector output capacitance  
Cob  
pF  
(Common base, input open circuited)  
Forward transfer gain *  
S21e2 VCE = 8 V, IC = 20 mA, f = 1.5 GHz  
GUM VCE = 8 V, IC = 20 mA, f = 1.5 GHz  
7
9
dB  
dB  
Maximum unilateral power gain *  
10  
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
2. : Pulse measurement  
*
Publication date: June 2003  
SJJ00217BED  
1

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